Owing to increased performance capabilities over their LED counterparts, Gallium Nitride (GaN) based Laser Diodes (LDs) are becoming more prevalent in several applications, including lighting, visible light communications, medical spectroscopy, and atom cooling. For many of these applications, a tunable, precise wavelength is necessary such that chromatic aberrations are minimized and that specific wavelengths with narrow linewidth can be utilized for atomic transitions or filtered communications systems. This paper discusses one method of achieving single-mode lasing operation in GaN LDs, namely the deeply-etched sidewall grating Distributed Feedback (DFB) LD. Optical characteristics of such devices will be discussed, as well as their feasibility for optical communications.
|Title of host publication||2019 IEEE 2nd British and Irish Conference on Optics and Photonics, BICOP 2019|
|Publication status||Published - 9 Apr 2020|
|Event||2nd IEEE British and Irish Conference on Optics and Photonics, BICOP 2019 - London, United Kingdom|
Duration: 11 Dec 2019 → 13 Dec 2019
|Name||2019 IEEE 2nd British and Irish Conference on Optics and Photonics, BICOP 2019|
|Conference||2nd IEEE British and Irish Conference on Optics and Photonics, BICOP 2019|
|Period||11/12/19 → 13/12/19|
Bibliographical noteFunding Information:
This research has been supported by the European Union with grant E10509, Innovate UK through grant 132543, the National Centre for Research and Development (E10509/29/NCBR/2017 and 1/POLBER-3/2018 and project NCN-2013/11/B/ST3/04263), and the Engineering and Physical Sciences Research Council (RCUK Grant no. EP/L015323/1).
- Distributed Feedback Laser Diodes
- Gallium Nitride
- Optical Communications