Solid phase epitaxial regrowth of ion implanted silicon on sapphire using rapid thermal annealing

A.M. Hodge, N.G. Chew, A.G. Cullis

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Solid phase epitaxial regrowth of silicon on sapphire is used to improve the quality of as-received silicon films prior to conventional device processing. It has been shown that this is necessary, especially for layers of 0.3μm and thinner, if the full potential of this particular silicon on insulator technology is to be realised. Si+ ions are implanted at an energy and dose such that all but the surface of the silicon film is rendered amorphous. In this study, the layer is regrown using a rapid thermal annealer operated in the multi-second regime. A second shallower implant followed by rapid thermal annealing produces a further improvement. Characterisation of the material has been principally by cross-sectional transmission electron microscopy. The structures observed after different implant and regrowth treatments are discussed
Original languageEnglish
Title of host publicationEnergy beam-solid interactions and transient thermal processing/1984 :
Subtitle of host publication symposium : Fall meeting : papers
EditorsD.K. Biegelsen , G.A. Rozgony, Charles V. Shank
Place of PublicationPittsburgh
Pages393-399
Number of pages7
Volume35
DOIs
Publication statusPublished - 1985

Keywords

  • crystals-epitaxial growth
  • rapid thermal annealing
  • amorphous
  • ion implantation
  • silicon on insulator
  • silicon on saphire
  • solid phsase epitaxy

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