Solid phase epitaxial regrowth of ion implanted silicon on sapphire using rapid thermal annealing

A.M. Hodge; N.G. Chew; A.G. Cullis

doi:10.1557/PROC-35-393

Solid phase epitaxial regrowth of ion implanted silicon on sapphire using rapid thermal annealing

A.M. Hodge, N.G. Chew, A.G. Cullis

Aston STEM Education Centre

Research output: Chapter in Book/Published conference output › Chapter

Abstract

Solid phase epitaxial regrowth of silicon on sapphire is used to improve the quality of as-received silicon films prior to conventional device processing. It has been shown that this is necessary, especially for layers of 0.3μm and thinner, if the full potential of this particular silicon on insulator technology is to be realised. Si+ ions are implanted at an energy and dose such that all but the surface of the silicon film is rendered amorphous. In this study, the layer is regrown using a rapid thermal annealer operated in the multi-second regime. A second shallower implant followed by rapid thermal annealing produces a further improvement. Characterisation of the material has been principally by cross-sectional transmission electron microscopy. The structures observed after different implant and regrowth treatments are discussed

Original language	English
Title of host publication	Energy beam-solid interactions and transient thermal processing/1984 :
Subtitle of host publication	symposium : Fall meeting : papers
Editors	D.K. Biegelsen , G.A. Rozgony, Charles V. Shank
Place of Publication	Pittsburgh
Pages	393-399
Number of pages	7
Volume	35
DOIs	https://doi.org/10.1557/PROC-35-393
Publication status	Published - 1985

Keywords

crystals-epitaxial growth
rapid thermal annealing
amorphous
ion implantation
silicon on insulator
silicon on saphire
solid phsase epitaxy

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10.1557/PROC-35-393

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Hodge, A. M., Chew, N. G., & Cullis, A. G. (1985). Solid phase epitaxial regrowth of ion implanted silicon on sapphire using rapid thermal annealing. In D. K. Biegelsen , G. A. Rozgony, & C. V. Shank (Eds.), Energy beam-solid interactions and transient thermal processing/1984 : symposium : Fall meeting : papers (Vol. 35, pp. 393-399). https://doi.org/10.1557/PROC-35-393

@inbook{6cd1a0cf97674d46aa27af9d3333a6c5,

title = "Solid phase epitaxial regrowth of ion implanted silicon on sapphire using rapid thermal annealing",

abstract = "Solid phase epitaxial regrowth of silicon on sapphire is used to improve the quality of as-received silicon films prior to conventional device processing. It has been shown that this is necessary, especially for layers of 0.3μm and thinner, if the full potential of this particular silicon on insulator technology is to be realised. Si+ ions are implanted at an energy and dose such that all but the surface of the silicon film is rendered amorphous. In this study, the layer is regrown using a rapid thermal annealer operated in the multi-second regime. A second shallower implant followed by rapid thermal annealing produces a further improvement. Characterisation of the material has been principally by cross-sectional transmission electron microscopy. The structures observed after different implant and regrowth treatments are discussed",

keywords = "crystals-epitaxial growth, rapid thermal annealing, amorphous, ion implantation, silicon on insulator , silicon on saphire, solid phsase epitaxy",

author = "A.M. Hodge and N.G. Chew and A.G. Cullis",

year = "1985",

doi = "10.1557/PROC-35-393",

language = "English",

isbn = "0931837006 ",

volume = "35",

pages = "393--399",

editor = "{Biegelsen }, D.K. and G.A. Rozgony and Shank, {Charles V.}",

booktitle = "Energy beam-solid interactions and transient thermal processing/1984 :",

}

Solid phase epitaxial regrowth of ion implanted silicon on sapphire using rapid thermal annealing. / Hodge, A.M.; Chew, N.G.; Cullis, A.G.
Energy beam-solid interactions and transient thermal processing/1984 : symposium : Fall meeting : papers . ed. / D.K. Biegelsen ; G.A. Rozgony; Charles V. Shank. Vol. 35 Pittsburgh, 1985. p. 393-399.

Research output: Chapter in Book/Published conference output › Chapter

TY - CHAP

T1 - Solid phase epitaxial regrowth of ion implanted silicon on sapphire using rapid thermal annealing

AU - Hodge, A.M.

AU - Chew, N.G.

AU - Cullis, A.G.

PY - 1985

Y1 - 1985

N2 - Solid phase epitaxial regrowth of silicon on sapphire is used to improve the quality of as-received silicon films prior to conventional device processing. It has been shown that this is necessary, especially for layers of 0.3μm and thinner, if the full potential of this particular silicon on insulator technology is to be realised. Si+ ions are implanted at an energy and dose such that all but the surface of the silicon film is rendered amorphous. In this study, the layer is regrown using a rapid thermal annealer operated in the multi-second regime. A second shallower implant followed by rapid thermal annealing produces a further improvement. Characterisation of the material has been principally by cross-sectional transmission electron microscopy. The structures observed after different implant and regrowth treatments are discussed

AB - Solid phase epitaxial regrowth of silicon on sapphire is used to improve the quality of as-received silicon films prior to conventional device processing. It has been shown that this is necessary, especially for layers of 0.3μm and thinner, if the full potential of this particular silicon on insulator technology is to be realised. Si+ ions are implanted at an energy and dose such that all but the surface of the silicon film is rendered amorphous. In this study, the layer is regrown using a rapid thermal annealer operated in the multi-second regime. A second shallower implant followed by rapid thermal annealing produces a further improvement. Characterisation of the material has been principally by cross-sectional transmission electron microscopy. The structures observed after different implant and regrowth treatments are discussed

KW - crystals-epitaxial growth

KW - rapid thermal annealing

KW - amorphous

KW - ion implantation

KW - silicon on insulator

KW - silicon on saphire

KW - solid phsase epitaxy

UR - http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8145071&fileId=S1946427400404811

U2 - 10.1557/PROC-35-393

DO - 10.1557/PROC-35-393

M3 - Chapter

SN - 0931837006

VL - 35

SP - 393

EP - 399

BT - Energy beam-solid interactions and transient thermal processing/1984 :

A2 - Biegelsen , D.K.

A2 - Rozgony, G.A.

A2 - Shank, Charles V.

CY - Pittsburgh

ER -

Solid phase epitaxial regrowth of ion implanted silicon on sapphire using rapid thermal annealing

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Keywords

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