Solution-processable, niobium-doped titanium oxide nanorods for application in low-voltage, large-area electronic devices

F. A. Alharthi, F. Cheng, E. Verrelli, N. T. Kemp, A. F. Lee, M. A. Isaacs, M. O’neill, S. M. Kelly

Research output: Contribution to journalArticlepeer-review


We report for the first time the one-step synthesis of solution-processable, highly crystalline, niobiumdoped titanium dioxide (Nb-TiO2) nanorods in the anatase phase by the hydrolytic condensation of Ti(Oi Pr)4 and niobium(V) ethoxide using oleic acid as a structure-directing and stabilising agent. These
novel surface-stabilised nanorods can be easily dispersed in common solvents at relatively high concentration (B10%) and deposited as uniform, thin and transparent films on planar substrates for the fabrication of electronic devices. The small size of the nanoparticles synthesized represents an important
advance in achieving high-k dielectric thin films smooth enough to be suitable for OFET applications and the plastic electronics filed in general. Preliminary investigations show that the dielectric constant, k, of niobium-doped (7.1 wt%) titanium dioxide (Nb-TiO2) nanorods at frequencies in the region of
100 kHz–1 MHz, are more a third greater (k 4 8) than that (k = 6) determined for the corresponding undoped titanium dioxide (TiO2) nanorods. The current–voltage (J–V) behaviour of these devices reveal that niobium-doping improves, by reducing, the leakage current of these devices, thereby preventing
hard dielectric breakdown of devices incorporating these new nanorods
Original languageEnglish
Pages (from-to)1038-1047
JournalJournal of Materials Chemistry C
Early online date28 Dec 2017
Publication statusPublished - 28 Dec 2017

Bibliographical note

© The Royal Society of Chemistry 2018


Dive into the research topics of 'Solution-processable, niobium-doped titanium oxide nanorods for application in low-voltage, large-area electronic devices'. Together they form a unique fingerprint.

Cite this