Solution-processable, niobium-doped titanium oxide nanorods for application in low-voltage, large-area electronic devices

F. A. Alharthi, F. Cheng, E. Verrelli, N. T. Kemp, A. F. Lee, M. A. Isaacs, M. O’neill, S. M. Kelly

Research output: Contribution to journalArticle

Abstract

We report for the first time the one-step synthesis of solution-processable, highly crystalline, niobiumdoped titanium dioxide (Nb-TiO2) nanorods in the anatase phase by the hydrolytic condensation of Ti(Oi Pr)4 and niobium(V) ethoxide using oleic acid as a structure-directing and stabilising agent. These
novel surface-stabilised nanorods can be easily dispersed in common solvents at relatively high concentration (B10%) and deposited as uniform, thin and transparent films on planar substrates for the fabrication of electronic devices. The small size of the nanoparticles synthesized represents an important
advance in achieving high-k dielectric thin films smooth enough to be suitable for OFET applications and the plastic electronics filed in general. Preliminary investigations show that the dielectric constant, k, of niobium-doped (7.1 wt%) titanium dioxide (Nb-TiO2) nanorods at frequencies in the region of
100 kHz–1 MHz, are more a third greater (k 4 8) than that (k = 6) determined for the corresponding undoped titanium dioxide (TiO2) nanorods. The current–voltage (J–V) behaviour of these devices reveal that niobium-doping improves, by reducing, the leakage current of these devices, thereby preventing
hard dielectric breakdown of devices incorporating these new nanorods
Original languageEnglish
Pages (from-to)1038-1047
JournalJournal of Materials Chemistry C
Volume6
Early online date28 Dec 2017
DOIs
Publication statusPublished - 28 Dec 2017

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Niobium
Titanium oxides
Nanorods
Titanium dioxide
Electric potential
Organic field effect transistors
Dielectric films
Oleic acid
Excipients
Oleic Acid
Electric breakdown
Leakage currents
Condensation
Permittivity
Electronic equipment
Doping (additives)
titanium dioxide
Plastics
Nanoparticles
Crystalline materials

Bibliographical note

© The Royal Society of Chemistry 2018

Cite this

Alharthi, F. A., Cheng, F., Verrelli, E., Kemp, N. T., Lee, A. F., Isaacs, M. A., ... Kelly, S. M. (2017). Solution-processable, niobium-doped titanium oxide nanorods for application in low-voltage, large-area electronic devices. Journal of Materials Chemistry C, 6, 1038-1047. https://doi.org/10.1039/C7TC04197G
Alharthi, F. A. ; Cheng, F. ; Verrelli, E. ; Kemp, N. T. ; Lee, A. F. ; Isaacs, M. A. ; O’neill, M. ; Kelly, S. M. / Solution-processable, niobium-doped titanium oxide nanorods for application in low-voltage, large-area electronic devices. In: Journal of Materials Chemistry C. 2017 ; Vol. 6. pp. 1038-1047.
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Alharthi, FA, Cheng, F, Verrelli, E, Kemp, NT, Lee, AF, Isaacs, MA, O’neill, M & Kelly, SM 2017, 'Solution-processable, niobium-doped titanium oxide nanorods for application in low-voltage, large-area electronic devices', Journal of Materials Chemistry C, vol. 6, pp. 1038-1047. https://doi.org/10.1039/C7TC04197G

Solution-processable, niobium-doped titanium oxide nanorods for application in low-voltage, large-area electronic devices. / Alharthi, F. A.; Cheng, F.; Verrelli, E.; Kemp, N. T.; Lee, A. F.; Isaacs, M. A.; O’neill, M.; Kelly, S. M.

In: Journal of Materials Chemistry C, Vol. 6, 28.12.2017, p. 1038-1047.

Research output: Contribution to journalArticle

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T1 - Solution-processable, niobium-doped titanium oxide nanorods for application in low-voltage, large-area electronic devices

AU - Alharthi, F. A.

AU - Cheng, F.

AU - Verrelli, E.

AU - Kemp, N. T.

AU - Lee, A. F.

AU - Isaacs, M. A.

AU - O’neill, M.

AU - Kelly, S. M.

N1 - © The Royal Society of Chemistry 2018

PY - 2017/12/28

Y1 - 2017/12/28

N2 - We report for the first time the one-step synthesis of solution-processable, highly crystalline, niobiumdoped titanium dioxide (Nb-TiO2) nanorods in the anatase phase by the hydrolytic condensation of Ti(Oi Pr)4 and niobium(V) ethoxide using oleic acid as a structure-directing and stabilising agent. Thesenovel surface-stabilised nanorods can be easily dispersed in common solvents at relatively high concentration (B10%) and deposited as uniform, thin and transparent films on planar substrates for the fabrication of electronic devices. The small size of the nanoparticles synthesized represents an importantadvance in achieving high-k dielectric thin films smooth enough to be suitable for OFET applications and the plastic electronics filed in general. Preliminary investigations show that the dielectric constant, k, of niobium-doped (7.1 wt%) titanium dioxide (Nb-TiO2) nanorods at frequencies in the region of100 kHz–1 MHz, are more a third greater (k 4 8) than that (k = 6) determined for the corresponding undoped titanium dioxide (TiO2) nanorods. The current–voltage (J–V) behaviour of these devices reveal that niobium-doping improves, by reducing, the leakage current of these devices, thereby preventinghard dielectric breakdown of devices incorporating these new nanorods

AB - We report for the first time the one-step synthesis of solution-processable, highly crystalline, niobiumdoped titanium dioxide (Nb-TiO2) nanorods in the anatase phase by the hydrolytic condensation of Ti(Oi Pr)4 and niobium(V) ethoxide using oleic acid as a structure-directing and stabilising agent. Thesenovel surface-stabilised nanorods can be easily dispersed in common solvents at relatively high concentration (B10%) and deposited as uniform, thin and transparent films on planar substrates for the fabrication of electronic devices. The small size of the nanoparticles synthesized represents an importantadvance in achieving high-k dielectric thin films smooth enough to be suitable for OFET applications and the plastic electronics filed in general. Preliminary investigations show that the dielectric constant, k, of niobium-doped (7.1 wt%) titanium dioxide (Nb-TiO2) nanorods at frequencies in the region of100 kHz–1 MHz, are more a third greater (k 4 8) than that (k = 6) determined for the corresponding undoped titanium dioxide (TiO2) nanorods. The current–voltage (J–V) behaviour of these devices reveal that niobium-doping improves, by reducing, the leakage current of these devices, thereby preventinghard dielectric breakdown of devices incorporating these new nanorods

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U2 - 10.1039/C7TC04197G

DO - 10.1039/C7TC04197G

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JO - Journal of Materials Chemistry C

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