Specific optical and photoelectric properties of thin CuIn3Se5films synthesized by laser deposition

E. Borisov; Ya Vertsimakha; P. Lutsik; A. Tver'yanovich; Yu Tver'yanovich

doi:10.1134/S1063782607120020

Specific optical and photoelectric properties of thin CuIn3Se5films synthesized by laser deposition

E. Borisov, Ya Vertsimakha, P. Lutsik, A. Tver'yanovich, Yu Tver'yanovich

Research output: Contribution to journal › Article › peer-review

Abstract

Optical and photovoltaic properties of films produced by laser deposition of CuIn3Se5 and the effect of the temperature conditions of film synthesis on these properties are studied. The composition of the films deposited onto substrates held at room temperature coincides with that of the target, with the films obtained in the vitreous state. Heating of substrates during deposition leads to a larger fraction of the crystalline phase and lower fraction of Se in a film. Annealing of glassy CuIn3Se5 films in a vacuum at temperatures of up to 700 K causes their crystallization without changes in composition. The photosensitivity of the films is highest at annealing temperatures of 510–600 K.

Original language	English
Pages (from-to)	1394–1397
Journal	Semiconductors
Volume	41
Issue number	12
DOIs	https://doi.org/10.1134/S1063782607120020
Publication status	Published - 2007

Access to Document

10.1134/S1063782607120020

Cite this

@article{75aa1f70689544cf9014cd5028d87cd4,

title = "Specific optical and photoelectric properties of thin CuIn3Se5films synthesized by laser deposition",

abstract = "Optical and photovoltaic properties of films produced by laser deposition of CuIn3Se5 and the effect of the temperature conditions of film synthesis on these properties are studied. The composition of the films deposited onto substrates held at room temperature coincides with that of the target, with the films obtained in the vitreous state. Heating of substrates during deposition leads to a larger fraction of the crystalline phase and lower fraction of Se in a film. Annealing of glassy CuIn3Se5 films in a vacuum at temperatures of up to 700 K causes their crystallization without changes in composition. The photosensitivity of the films is highest at annealing temperatures of 510–600 K.",

author = "E. Borisov and Ya Vertsimakha and P. Lutsik and A. Tver'yanovich and Yu Tver'yanovich",

year = "2007",

doi = "10.1134/S1063782607120020",

language = "English",

volume = "41",

pages = "1394–1397",

journal = "Semiconductors",

issn = "1090-6479",

publisher = "Springer",

number = "12",

}

TY - JOUR

T1 - Specific optical and photoelectric properties of thin CuIn3Se5films synthesized by laser deposition

AU - Borisov, E.

AU - Vertsimakha, Ya

AU - Lutsik, P.

AU - Tver'yanovich, A.

AU - Tver'yanovich, Yu

PY - 2007

Y1 - 2007

N2 - Optical and photovoltaic properties of films produced by laser deposition of CuIn3Se5 and the effect of the temperature conditions of film synthesis on these properties are studied. The composition of the films deposited onto substrates held at room temperature coincides with that of the target, with the films obtained in the vitreous state. Heating of substrates during deposition leads to a larger fraction of the crystalline phase and lower fraction of Se in a film. Annealing of glassy CuIn3Se5 films in a vacuum at temperatures of up to 700 K causes their crystallization without changes in composition. The photosensitivity of the films is highest at annealing temperatures of 510–600 K.

AB - Optical and photovoltaic properties of films produced by laser deposition of CuIn3Se5 and the effect of the temperature conditions of film synthesis on these properties are studied. The composition of the films deposited onto substrates held at room temperature coincides with that of the target, with the films obtained in the vitreous state. Heating of substrates during deposition leads to a larger fraction of the crystalline phase and lower fraction of Se in a film. Annealing of glassy CuIn3Se5 films in a vacuum at temperatures of up to 700 K causes their crystallization without changes in composition. The photosensitivity of the films is highest at annealing temperatures of 510–600 K.

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-37349011539&partnerID=MN8TOARS

UR - https://link.springer.com/article/10.1134%2FS1063782607120020

U2 - 10.1134/S1063782607120020

DO - 10.1134/S1063782607120020

M3 - Article

SN - 1090-6479

VL - 41

SP - 1394

EP - 1397

JO - Semiconductors

JF - Semiconductors

IS - 12

ER -

Specific optical and photoelectric properties of thin CuIn3Se5films synthesized by laser deposition

Abstract

Access to Document

Other files and links

Fingerprint

Cite this