Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness

Lin Shao, Yuan Lin, J.G. Swadener, J.K. Lee, Q.X. Jia, Y.Q. Wang, M. Nastasi, Phillip E. Thompson, N. David Theodore, T.L. Alford, J.W. Mayer, Peng Chen, S.S. Lau

Research output: Contribution to journalArticle

Abstract

We report a process for the lift-off of an ultrathin Si layer. By plasma hydrogenation of a molecular-beam-epitaxy-grown heterostructure of SiSb-doped-SiSi, ultrashallow cracking is controlled to occur at the depth of the Sb-doped layer. Prior to hydrogenation, an oxygen plasma treatment is used to induce the formation of a thin oxide layer on the surface of the heterostructure. Chemical etching of the surface oxide layer after hydrogenation further thins the thickness of the separated Si layer to be only 15 nm. Mechanisms of hydrogen trapping and strain-facilitated cracking are discussed.
Original languageEnglish
Article number251907
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number25
DOIs
Publication statusPublished - 19 Dec 2005

Bibliographical note

© 2005 American Institute of Physics. Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness. Lin Shao et al. Applied Physics Letters 2005 87:25

Keywords

  • lift-off
  • plasma hydrogenation
  • strain-facilitated cracking
  • ultrashallow cracking

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    Shao, L., Lin, Y., Swadener, J. G., Lee, J. K., Jia, Q. X., Wang, Y. Q., Nastasi, M., Thompson, P. E., Theodore, N. D., Alford, T. L., Mayer, J. W., Chen, P., & Lau, S. S. (2005). Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness. Applied Physics Letters, 87(25), 1-3. [251907]. https://doi.org/10.1063/1.2146211