XPS and XMCD study of Fe3O4/GaAs interface

Yongxiong Lu, Jill S. Claydon, Ehsan Ahmad, Yongbing Xu, Sarah M. Thompson, Karen Wilson, Gerrit van der Laan

Research output: Contribution to journalArticle

Abstract

Ultrathin Fe oxide films of various thicknesses prepared by post-growth oxidation on GaAs(100) surface have been investigated with X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), and X-ray magnetic circular dichroism (XMCD). The XPS confirms that the surfaces of the oxide are Fe3O4 rather than Fe2O3. XAS and XMCD measurements indicate the presence of insulating Fe divalent oxide phases (FeO) beneath the surface Fe3O4 layer with the sample thickness above 4 nm. This FeO might act as a barrier for the spin injection into the GaAs.
Original languageEnglish
Pages (from-to)2808-2810
Number of pages3
JournalIEEE Transactions on Magnetics
Volume41
Issue number10
Early online date17 Oct 2005
DOIs
Publication statusPublished - Oct 2005

Keywords

  • Half-metallic Fe3O4
  • post-growth oxidation
  • spintronics
  • XMCD

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    Lu, Y., Claydon, J. S., Ahmad, E., Xu, Y., Thompson, S. M., Wilson, K., & van der Laan, G. (2005). XPS and XMCD study of Fe3O4/GaAs interface. IEEE Transactions on Magnetics, 41(10), 2808-2810. https://doi.org/10.1109/TMAG.2005.854834