TY - JOUR
T1 - Effects of rare-earth (Tb, Yb, and Lu)-doping on the structural, electrical and ferroelectric properties of K
0.5
Bi
4.5
Ti
4
O
15
thin films
AU - Kim, J. W.
AU - Raghavan, C. M.
AU - Choi, J. Y.
AU - Kim, S. S.
PY - 2015/10/1
Y1 - 2015/10/1
N2 -
The electrical and the ferroelectric properties of pure K
0.5
Bi
4.5
Ti
4
O
15
and a series of rare-earth-doped K
0.5
RE
0.5
Bi
4
Ti
4
O
15
(RE = Tb, Yb, and Lu) thin films deposited on Pt(111)/Ti/SiO
2
/Si(100) substrates by using a chemical solution deposition method have been investigated. Compared to the pure K
0.5
Bi
4.5
Ti
4
O
15
thin film, there were no structural changes in the K
0.5
RE
0.5
Bi
4
Ti
4
O
15
thin films while the leakage current and the ferroelectric properties were significantly improved. Among the thin films, the K
0.5
Lu
0.5
Bi
4
Ti
4
O
15
thin film exhibited wellsaturated hysteresis loops with a large remnant polarization (2P
r
) of 32 μC/cm
2
and a coercive field (2E
c
) of 307 kV/cm at an applied electric field of 886 kV/cm. Furthermore, a low leakage current density of 2.95 × 10
−9
A/cm
2
, which is about two orders of magnitude lower than that of the K
0.5
Bi
4.5
Ti
4
O
15
thin film, was measured in the K
0.5
Lu
0.5
Bi
4
Ti
4
O
15
thin film at an applied electric field of 100 kV/cm. The enhanced electrical and ferroelectric properties observed in the rare-earthdoped K
0.5
RE
0.5
Bi
4
Ti
4
O
15
thin films can be correlated to a decrease in the number of ionic defects, such as bismuth and oxygen vacancies, structural distortion, and improved microstructure.
AB -
The electrical and the ferroelectric properties of pure K
0.5
Bi
4.5
Ti
4
O
15
and a series of rare-earth-doped K
0.5
RE
0.5
Bi
4
Ti
4
O
15
(RE = Tb, Yb, and Lu) thin films deposited on Pt(111)/Ti/SiO
2
/Si(100) substrates by using a chemical solution deposition method have been investigated. Compared to the pure K
0.5
Bi
4.5
Ti
4
O
15
thin film, there were no structural changes in the K
0.5
RE
0.5
Bi
4
Ti
4
O
15
thin films while the leakage current and the ferroelectric properties were significantly improved. Among the thin films, the K
0.5
Lu
0.5
Bi
4
Ti
4
O
15
thin film exhibited wellsaturated hysteresis loops with a large remnant polarization (2P
r
) of 32 μC/cm
2
and a coercive field (2E
c
) of 307 kV/cm at an applied electric field of 886 kV/cm. Furthermore, a low leakage current density of 2.95 × 10
−9
A/cm
2
, which is about two orders of magnitude lower than that of the K
0.5
Bi
4.5
Ti
4
O
15
thin film, was measured in the K
0.5
Lu
0.5
Bi
4
Ti
4
O
15
thin film at an applied electric field of 100 kV/cm. The enhanced electrical and ferroelectric properties observed in the rare-earthdoped K
0.5
RE
0.5
Bi
4
Ti
4
O
15
thin films can be correlated to a decrease in the number of ionic defects, such as bismuth and oxygen vacancies, structural distortion, and improved microstructure.
KW - Electrical properties
KW - Ferroelectric properties
KW - K Bi Ti O thin films
KW - Structure
UR - http://www.scopus.com/inward/record.url?scp=84944452403&partnerID=8YFLogxK
UR - https://link.springer.com/article/10.3938%2Fjkps.67.1246
U2 - 10.3938/jkps.67.1246
DO - 10.3938/jkps.67.1246
M3 - Article
AN - SCOPUS:84944452403
SN - 0374-4884
VL - 67
SP - 1246
EP - 1251
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
IS - 7
ER -