Effects of rare-earth (Tb, Yb, and Lu)-doping on the structural, electrical and ferroelectric properties of K 0.5 Bi 4.5 Ti 4 O 15 thin films

J. W. Kim, C. M. Raghavan, J. Y. Choi, S. S. Kim*

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

The electrical and the ferroelectric properties of pure K 0.5 Bi 4.5 Ti 4 O 15 and a series of rare-earth-doped K 0.5 RE 0.5 Bi 4 Ti 4 O 15 (RE = Tb, Yb, and Lu) thin films deposited on Pt(111)/Ti/SiO 2 /Si(100) substrates by using a chemical solution deposition method have been investigated. Compared to the pure K 0.5 Bi 4.5 Ti 4 O 15 thin film, there were no structural changes in the K 0.5 RE 0.5 Bi 4 Ti 4 O 15 thin films while the leakage current and the ferroelectric properties were significantly improved. Among the thin films, the K 0.5 Lu 0.5 Bi 4 Ti 4 O 15 thin film exhibited wellsaturated hysteresis loops with a large remnant polarization (2P r ) of 32 μC/cm 2 and a coercive field (2E c ) of 307 kV/cm at an applied electric field of 886 kV/cm. Furthermore, a low leakage current density of 2.95 × 10 −9 A/cm 2 , which is about two orders of magnitude lower than that of the K 0.5 Bi 4.5 Ti 4 O 15 thin film, was measured in the K 0.5 Lu 0.5 Bi 4 Ti 4 O 15 thin film at an applied electric field of 100 kV/cm. The enhanced electrical and ferroelectric properties observed in the rare-earthdoped K 0.5 RE 0.5 Bi 4 Ti 4 O 15 thin films can be correlated to a decrease in the number of ionic defects, such as bismuth and oxygen vacancies, structural distortion, and improved microstructure.

Original languageEnglish
Pages (from-to)1246-1251
Number of pages6
JournalJournal of the Korean Physical Society
Volume67
Issue number7
DOIs
Publication statusPublished - 1 Oct 2015

Keywords

  • Electrical properties
  • Ferroelectric properties
  • K Bi Ti O thin films
  • Structure

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