Interpretation of UV reflectance measurements on silicon on sapphire by spectral reflectance and ellipsometry studies

C. Pickering, A.M. Hodge, A.C. Daw, D.J. Robbins, P.J. Pearson, R. Greef

Research output: Contribution to journalArticle

Abstract

Spectral reflectance and spectroscopic ellipsometry measurements have been made on SOS wafers with haze ratings 1-5. The wavelength dependence of reflectance is dominated by surface scattering, but degraded crystallinity effects are also observed, and are significant in some samples. Analysis of dielectric function spectra using an effective medium approximation has indicated the presence of α-Si and voids in surface layers up to 300Å thick in medium haze wafers, with concentrations decreasing away from the surface. The assessment parameter normally used for SOS, UVR No., has been shown to includeboth crystallinity and scattering effects, and their relative importance cannot be determined without more detailed measurements.
Original languageEnglish
Pages (from-to)317-322
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume53
DOIs
Publication statusPublished - 1985

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spectral reflectance
haze
Reflectometers
Aluminum Oxide
Ellipsometry
Silicon
Sapphire
ellipsometry
crystallinity
sapphire
wafers
reflectance
Surface scattering
Spectroscopic ellipsometry
ratings
silicon
scattering
voids
surface layers
Scattering

Cite this

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title = "Interpretation of UV reflectance measurements on silicon on sapphire by spectral reflectance and ellipsometry studies",
abstract = "Spectral reflectance and spectroscopic ellipsometry measurements have been made on SOS wafers with haze ratings 1-5. The wavelength dependence of reflectance is dominated by surface scattering, but degraded crystallinity effects are also observed, and are significant in some samples. Analysis of dielectric function spectra using an effective medium approximation has indicated the presence of α-Si and voids in surface layers up to 300{\AA} thick in medium haze wafers, with concentrations decreasing away from the surface. The assessment parameter normally used for SOS, UVR No., has been shown to includeboth crystallinity and scattering effects, and their relative importance cannot be determined without more detailed measurements.",
author = "C. Pickering and A.M. Hodge and A.C. Daw and D.J. Robbins and P.J. Pearson and R. Greef",
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language = "English",
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Interpretation of UV reflectance measurements on silicon on sapphire by spectral reflectance and ellipsometry studies. / Pickering, C.; Hodge, A.M.; Daw, A.C.; Robbins, D.J.; Pearson, P.J.; Greef, R.

In: Materials Research Society Symposium Proceedings, Vol. 53, 1985, p. 317-322.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Interpretation of UV reflectance measurements on silicon on sapphire by spectral reflectance and ellipsometry studies

AU - Pickering, C.

AU - Hodge, A.M.

AU - Daw, A.C.

AU - Robbins, D.J.

AU - Pearson, P.J.

AU - Greef, R.

PY - 1985

Y1 - 1985

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AB - Spectral reflectance and spectroscopic ellipsometry measurements have been made on SOS wafers with haze ratings 1-5. The wavelength dependence of reflectance is dominated by surface scattering, but degraded crystallinity effects are also observed, and are significant in some samples. Analysis of dielectric function spectra using an effective medium approximation has indicated the presence of α-Si and voids in surface layers up to 300Å thick in medium haze wafers, with concentrations decreasing away from the surface. The assessment parameter normally used for SOS, UVR No., has been shown to includeboth crystallinity and scattering effects, and their relative importance cannot be determined without more detailed measurements.

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U2 - 10.1557/PROC-53-317

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EP - 322

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

SN - 0272-9172

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